MBR2530CT thru mbr2540ct symbol characteristics i (av) maximum average forward rectified current @t c =130 c i fsm maximum ratings 30 150 a a unit o maximum forward voltage (per leg) at (note 1) i f =15a @t j =25 c i f =15a @t j =125 c i f =30a @t j =25 c i f =30a @t j =125 c v f i r maximum dc reverse current at rated dc blocking voltage @t j =25 c @t j =125 c c j typical junction capacitance per element (note 3) t j operating temperature range - - 0.82 0.73 0.2 40 1.5 450 -55 to +150 -55 to +175 v ma pf o o o o o typical thermal resistance (note 2) r ojc c/w o c o notes: 1. 300us pulse width, duty cycle 2%. 2. thermal resistance junction to case. 3. measured at 1.0mhz and applied reverse voltage of 4.0v dc. o high tjm low irrm schottky barrier diodes MBR2530CT mbr2535ct mbr2540ct v rrm v 30 35 40 v rms v 21 24.5 28 v dc v 30 35 40 peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (jedec method) dv/dt voltage rate of change (rated v r ) 10000 v/us c o t stg storage temperature range features * metal of silicon rectifier, majority carrier conducton * guard ring for transient protection * low power loss, high efficiency * high current capability, low v f * high surge capacity * for use in low voltage, high frequency inverters, free whelling, and polarity protection applications mechanical data * case: to-220ab molded plastic * polarity: as marked on the body * weight: 2 grams * mounting position: any a=anode, c=cathode, tab=cathode a a c c(tab) a c a dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions to-220ab * rohs compliant p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
MBR2530CT thru mbr2540ct high tjm low irrm schottky barrier diodes f ig.5 - t ypical junct i o n capacit ance ca pa ci t a n c e , ( p f ) re ve rs e vo l t a g e , v o l t s 10 1 10 0 10 0 0 0 1000 10 0 0. 1 4 t j = 25 c , f= 1 m hz percent o f ra t e d peak reverse vo l t ag e ,(%) f ig.3 - t ypical reverse charact erist i cs i n st ant a n e o u s reverse current , ( ma) 20 4 0 12 0 140 0 0. 00 1 0. 1 1. 0 10 0 . 0 10. 0 60 80 1 0 0 t j = 1 2 5 c 0. 01 t j = 2 5 c t j = 7 5 c i n st an t a n e o u s f o r w a r d vo l t ag e , vo l t s f i g. 4 - t y pi ca l f o rw ar d ch ar a c t e r i s t i c s i n s t ant a n e o u s f o rw a r d curren t ,( a) 0. 1 0 . 2 0. 6 0. 7 0. 1 10 10 0 0. 3 0 . 4 0. 5 0. 0 1 0. 9 0. 8 i n st an t a n e o u s f o r w a r d vo l t ag e , vo l t s i n s t ant a n e o u s f o rw a r d curren t ,( a) 0 p u ls e w i d t h 300us 2 % d u ty cy cl e t j = 25 c 1. 0 t j = 1 5 0 c f ig.2 - m a x i m u m non- r epet it ive surge c urrent num ber of cy cles a t 60hz pe ak f o r w a r d su rg e cu rr en t , am peres 1 5 10 5 0 10 0 2 20 0 25 50 75 10 0 12 5 15 0 f i g . 1 - f o r w ar d cu rr e n t de r a t i ng c u r v e a v e r a g e f o rw ar d c u r r e n t a m p e r e s 8 . 3 m s s i n g le ha lf - s in e - w a v e ( j e d e c m e t h o d ) ca se t e m p er a t u r e , c 2 5 75 100 1 2 5 1 50 10 0 50 40 17 5 30 0 20 re s i s t i ve o r ind u c t i v e l o a d p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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